Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser

被引：3
|
作者：
Vasil'ev, P. P.
Kan, H.
Ohta, H.
Hiruma, T.
Tanaka, K.
机构：
[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
[2] Hamamatsu Photon KK, Cent Res Lab, Hamamatsu, Shizuoka 4348601, Japan
来源：
QUANTUM ELECTRONICS | 2006年 / 36卷 / 11期
关键词：
mode locking; quantum wells; external cavity;
D O I：
10.1070/QE2006v036n11ABEH013221
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A theoretical model of the optical gain in asymmetric GaAs/AlGaAs quantum-well lasers is developed. It is demonstrated that the emission spectrum of asymmetric GaAs/AlGaAs quantum-well lasers is much broader than that of standard quantum-well lasers. The experimental samples of such lasers and superluminescent diodes with the emission bandwidth exceeding 50 urn are fabricated. Wavelength tunable ultrashort pulses with duration of 1-2 ps at repetition rates of 0.4-1 GHz are obtained by active mode locking of an external cavity laser.
引用
收藏
页码：1065 / 1071
页数：7
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