Electrical properties of n-type GaPN grown by molecular-beam epitaxy

被引：17

作者：

Furukawa, Y ^{[1
]}

Yonezu, H ^{[1
]}

Wakahara, A ^{[1
]}

Yoshizumi, Y ^{[1
]}

Morita, Y ^{[1
]}

Sato, A ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 14期

关键词：

D O I：

10.1063/1.2193350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated electrical properties of n-GaPN layers grown by molecular-beam epitaxy with an rf-plasma source using sulfur and tellurium as dopants. The electron concentration in n-GaPN was about 10 times lower than that in n-GaP. Desorption of dopants from the grown surface by impinging N atoms may be one of the possible causes for the reduced electron concentration. In addition, electron mobilities in GaPN were restricted by ionized impurity scattering even at room temperature (RT). N atoms at N-related levels could trap the electrons, and these ionized N could act as a Columb scattering center for free electrons even at RT. (c) 2006 American Institute of Physics.

引用

页数：3

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