Electrical properties of n-type GaPN grown by molecular-beam epitaxy

被引：17
|
作者：
Furukawa, Y [1 ]
Yonezu, H [1 ]
Wakahara, A [1 ]
Yoshizumi, Y [1 ]
Morita, Y [1 ]
Sato, A [1 ]
机构：
[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 14期
关键词：
D O I：
10.1063/1.2193350
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated electrical properties of n-GaPN layers grown by molecular-beam epitaxy with an rf-plasma source using sulfur and tellurium as dopants. The electron concentration in n-GaPN was about 10 times lower than that in n-GaP. Desorption of dopants from the grown surface by impinging N atoms may be one of the possible causes for the reduced electron concentration. In addition, electron mobilities in GaPN were restricted by ionized impurity scattering even at room temperature (RT). N atoms at N-related levels could trap the electrons, and these ionized N could act as a Columb scattering center for free electrons even at RT. (c) 2006 American Institute of Physics.
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页数：3
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