Photoluminescence characteristics of catalyst free ZnO nanowires

被引：3
|
作者：
Mohanta, Antaryami [1 ]
Thareja, Raj K. [1 ]
机构：
[1] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
来源：
MATERIALS RESEARCH EXPRESS | 2014年 / 1卷 / 01期
关键词：
photoluminescence; ZnO nanowires; electron-hole plasma; exciton; DAP; ZINC-OXIDE NANOWIRES; OPTICAL-PROPERTIES; GROWTH; TEMPERATURE; EMISSION; FIELD;
D O I：
10.1088/2053-1591/1/1/015023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Catalyst free ZnO nanowires are grown by thermal evaporation, and are characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD) and photoluminescence (PL). The ultra-violet (UV) emission band observed in the PL of ZnO nanowires grown on ZnO buffer layer is investigated at different temperatures and excitation intensities. The prominently observed transitions at low temperatures are bound exciton (BX), first longitudinal optical (LO) phonon replica of free exciton (FXAn=1 - 1LO) and donor-acceptor pair (DAP). Electron-hole plasma (EHP) emission is observed above 175 K of temperature and above 1.27 MW cm(-2) of excitation intensity which is associated with the thermal ionization of bound excitons. The observed intensity and temperature dependent EHP emission is attributed to spontaneous emission.
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页数：13
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