Effect of Al2O3 Passivation on Electrical Properties of β-Ga2O3 Field-Effect Transistor

被引：21
|
作者：
Ma, Jiyeon [1 ]
Lee, Oukjae [2 ]
Yoo, Geonwook [1 ]
机构：
[1] Soongsil Univ, Sch Elect Engn, Seoul 06938, South Korea
[2] Korea Inst Sci & Technol, Ctr Spintron, Seoul 02792, South Korea
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2019年 / 7卷 / 01期
关键词：
beta-Ga2O3; passivation; surface depletion; SINGLE-CRYSTALS;
D O I：
10.1109/JEDS.2019.2912186
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the effect of Al2O3 surface passivation on electrical properties of beta-gallium oxide (beta-Ga2O3) nanomembrane field-effect transistor (FET). The fabricated bottom-gate beta-Ga2O3(100) FET exhibits enhanced channel conductance and reduced hysteresis after the conformal atomic layer deposited Al2O3 passivation investigated by high-resolution transmission electron microscope (HR-TEM) analysis. Moreover, abnormal positive threshold voltage (VTH) shifts under negative bias stress are turned into negative VTH shifts, and off-state breakdown characteristics is improved as well. A modeling work using physics-based TCAD shows reduced surface depletion effect after the surface passivation. The results demonstrate that high-quality ALD-Al2O3 surface passivation is an effective method to improve electrical properties of the bottom-gate beta-Ga2O3 FET and its device applications.
引用
收藏
页码：512 / 516
页数：5
相关论文
共 50 条
  • [41] Modeling interface charges in Al2O3/Ga2O3 normally-on n-channel field effect transistors
    Fardi, Hamid
    4TH INTERDISCIPLINARY CONFERENCE ON ELECTRICS AND COMPUTER, INTCEC 2024, 2024,
  • [42] Band offsets at the interfaces between β-Ga2O3 and Al2O3
    Lyu, Sai
    PHYSICAL REVIEW MATERIALS, 2023, 7 (01)
  • [43] Effect of Ag interlayer on the optical and passivation properties of flexible and transparent Al2O3/Ag/Al2O3 multilayer
    Jeong, Jin-A.
    Kim, Han-Ki
    Yi, Min-Su
    APPLIED PHYSICS LETTERS, 2008, 93 (03)
  • [44] EFFECT OF SMALL ADDITIONS OF AL2O3 AND GA2O3 ON IMMISCIBILITY TEMPERATURE OF NA2O-SIO2 GLASSES
    TOPPING, JA
    MURTHY, MK
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1973, 56 (05) : 270 - 275
  • [45] Effect of temperature on Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors
    Ren, F
    Hong, M
    Chu, SNG
    Marcus, MA
    Schurman, MJ
    Baca, A
    Pearton, SJ
    Abernathy, CR
    APPLIED PHYSICS LETTERS, 1998, 73 (26) : 3893 - 3895
  • [46] Effect of Ga2O3 seed layer on microstructure and properties of Ga2O3:Ta nanocrystalline film
    Huang, Haofei
    Zhang, Lei
    Gu, Keyun
    Qian, Zhichao
    Shang, Yi
    Zhang, Zilong
    Huang, Jian
    Tang, Ke
    Wang, Linjun
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 165
  • [47] Band offset and electrical properties of ErZO/ β-Ga2O3 and GZO/ β-Ga2O3 heterojunctions
    Shi, Ying-Li
    Huang, Dong
    Ling, Francis Chi-Chung
    APPLIED SURFACE SCIENCE, 2022, 576
  • [48] Post deposition annealing effect on the electrical properties of β-Ga2O3 Nanowire
    Shagolsem Romeo Meitei
    Rajshree Rajkumari
    Naorem Khelchand Singh
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 20378 - 20386
  • [49] Effect of Al2O3 Passive Layer on Stability and Doping of MoS2 Field-Effect Transistor (FET) Biosensors
    Pham, Tung
    Chen, Ying
    Lopez, Jhoann
    Yang, Mei
    Tran, Thien-Toan
    Mulchandani, Ashok
    BIOSENSORS-BASEL, 2021, 11 (12):
  • [50] Effect of inert components (Y2O3, Al2O3, and Ga2O3) on the chemistimulating effect of the Sb2O3 activator of GaAs thermal oxidation
    Penskoi, P. K.
    Kostryukov, V. F.
    Kutsev, S. V.
    Kuznetsova, I. V.
    Pshestanchik, V. R.
    Mittova, I. Ya.
    RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2009, 54 (10) : 1564 - 1570
12345