Effect of Al2O3 Passivation on Electrical Properties of β-Ga2O3 Field-Effect Transistor

被引：21
|
作者：
Ma, Jiyeon [1 ]
Lee, Oukjae [2 ]
Yoo, Geonwook [1 ]
机构：
[1] Soongsil Univ, Sch Elect Engn, Seoul 06938, South Korea
[2] Korea Inst Sci & Technol, Ctr Spintron, Seoul 02792, South Korea
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2019年 / 7卷 / 01期
关键词：
beta-Ga2O3; passivation; surface depletion; SINGLE-CRYSTALS;
D O I：
10.1109/JEDS.2019.2912186
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the effect of Al2O3 surface passivation on electrical properties of beta-gallium oxide (beta-Ga2O3) nanomembrane field-effect transistor (FET). The fabricated bottom-gate beta-Ga2O3(100) FET exhibits enhanced channel conductance and reduced hysteresis after the conformal atomic layer deposited Al2O3 passivation investigated by high-resolution transmission electron microscope (HR-TEM) analysis. Moreover, abnormal positive threshold voltage (VTH) shifts under negative bias stress are turned into negative VTH shifts, and off-state breakdown characteristics is improved as well. A modeling work using physics-based TCAD shows reduced surface depletion effect after the surface passivation. The results demonstrate that high-quality ALD-Al2O3 surface passivation is an effective method to improve electrical properties of the bottom-gate beta-Ga2O3 FET and its device applications.
引用
收藏
页码：512 / 516
页数：5
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