Correlation between the size and photoluminescence spectrum of quantum dots in InAs-QD/GaAs

被引:9
|
作者
Lunin, L. S. [1 ]
Chebotarev, S. N. [1 ]
Pashchenko, A. S. [1 ]
Dudnikov, S. A. [1 ]
机构
[1] Russian Acad Sci, Southern Sci Ctr, Rostov Na Donu, Russia
关键词
DEPOSITION;
D O I
10.1134/S1027451013010138
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A computational method for determining the real sizes of quantum dots based on the data of atomic force microscopy (AFM) is suggested. It is shown that the experimentally observed measurement error (for the AFM method) of the sizes of the pyramidal quantum dots with a base edge of a similar to 30-46 nm, stemming from convolution, is approximately equal to a quarter of the curvature radius of the AFM probe. Calibration curves of the dependence of the photoluminescence-peak positions of InAs-QD/GaAs heterostructures (in the range 900-1800 nm) on the sizes of the quantum dots measured with the probes whose curvature radii were from from 10 to 100 nm are established.
引用
收藏
页码:36 / 40
页数:5
相关论文
共 50 条
  • [11] Hydrostatic pressure coefficients of the photoluminescence of InAs/GaAs quantum dots
    Tang, NY
    Chen, XS
    Lu, W
    PHYSICS LETTERS A, 2005, 336 (4-5) : 434 - 439
  • [12] In situ photoluminescence study of uncapped InAs/GaAs quantum dots
    AbuWaar, Ziad Y.
    Marega, E., Jr.
    Mortazavi, M.
    Salamo, G. J.
    NANOTECHNOLOGY, 2008, 19 (33)
  • [13] Photoluminescence and magnetophotoluminescence of circular and elliptical InAs/GaAs quantum dots
    Kuldová, K.
    Krápek, V.
    Hospodková, A.
    Zrzavecká, O. Bonaventurová
    Oswald, J.
    Hulicius, E.
    Humlicek, J.
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (5-7): : 983 - 986
  • [14] Photoluminescence spectra of InAs quantum dots embedded in GaAs heterostructure
    Makhijani, Rahul M.
    Chakrabarti, S.
    Singh, Vijay A.
    JOURNAL OF LUMINESCENCE, 2013, 136 : 401 - 406
  • [15] Hydrostatic pressure coefficients of the photoluminescence of InAs/GaAs quantum dots
    Tang, NY
    Chen, XS
    Lu, W
    ACTA PHYSICA SINICA, 2005, 54 (05) : 2277 - 2281
  • [16] Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance
    Lee, JR
    Lu, CR
    Lee, WI
    Lee, SC
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 25 (04): : 562 - 568
  • [17] Polaron interaction in InAs/GaAs quantum dots and resonant photoluminescence
    Bissiri, M
    Baldassarri, G
    Von H, GBH
    Capizzi, M
    Fomin, VM
    Gladilin, VN
    Devreese, JT
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (03): : 639 - 642
  • [18] Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates
    Astakhov, GV
    Kochereshko, VP
    Vasil'ev, DG
    Evtikhiev, VP
    Tokranov, VE
    Kudryashov, IV
    Mikhailov, GV
    SEMICONDUCTORS, 1999, 33 (09) : 988 - 990
  • [19] Photoluminescence study of InAs/GaAs self-organized quantum dots with bimodal size distribution
    Guo, ZS
    Wang, HL
    Ning, D
    Feng, SL
    CHINESE PHYSICS, 2000, 9 (05): : 384 - 388
  • [20] Time-resolved photoluminescence of InAs quantum dots in a GaAs quantum well
    Pulizzi, F
    Kent, AJ
    Patanè, A
    Eaves, L
    Henini, M
    APPLIED PHYSICS LETTERS, 2004, 84 (16) : 3046 - 3048