In situ assembly of CuxS quantum-dots into thin film:: A highly conductive p-type transparent film

被引:37
|
作者
Liufu, Sheng-Cong [1 ]
Chen, Li-Dong [1 ]
Yao, Qin [1 ]
Huang, Fu-Qiang [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2008年 / 112卷 / 32期
关键词
D O I
10.1021/jp805029w
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Copper sulfide (CuxS) nanocrystals ranging from similar to 2 to 4 nm in diameter were in situ assembled on surface-functionalized substrates at room-temperature to realize novel transparent p-type conducting film that combines good optical transparency and high electrical conductivity. The CuxS film exhibited superior homogeneity, highly compact microstructure and good adhesion to quartz-glass and polyethylene substrates. Results of X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and electron diffraction revealed that the film consisted of uniform fine Cu7S4 nanocrystals with copper vacancies. Good optical transparency and large bandgap blue-shift were observed in the CuxS film attributed to the dominant quantum effect. The CuxS QD film turned out to be a p-type semiconducting film with a large conductivity up to 101 S.m(-1) at room temperature, which originated from the numerous defects stabilized by grain boundaries. A mechanism of the CuxS QD film formation has been proposed based on the surface-induced nucleation and the in situ assembly of the CuxS QDs.
引用
收藏
页码:12085 / 12088
页数:4
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