Spin accumulation in the extrinsic spin Hall effect

被引：58
|
作者：
Tse, WK [1 ]
Fabian, J
Zutic, I
Das Sarma, S
机构：
[1] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA
[2] Univ Regensburg, Inst Theoret Phys, D-93040 Regensburg, Germany
[3] USN, Res Lab, Ctr Computat Mat Sci, Washington, DC USA
来源：
PHYSICAL REVIEW B | 2005年 / 72卷 / 24期
关键词：
D O I：
10.1103/PhysRevB.72.241303
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The drift-diffusion formalism for spin-polarized carrier transport in semiconductors is generalized to include spin-orbit coupling. The theory is applied to treat the extrinsic spin Hall effect using realistic boundary conditions. It is shown that carrier and spin-diffusion lengths are modified by the presence of spin-orbit coupling and that spin accumulation due to the extrinsic spin Hall effect is strongly and qualitatively influenced by boundary conditions. Analytical formulas for the spin-dependent carrier recombination rates and inhomogeneous spin densities and currents are presented.
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页数：4
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