Computer simulation of layer-by-layer sputtering at grazing low-energy ion-surface interactions

被引：1

作者：

Umarov, Farid F. ^{[1
]}

Dzhurakhalov, Abdiravuf A. ^{[2
,3
]}

机构：

[1] Kazakh British Tech Univ, Alma Ata 050000, Kazakhstan

[2] UA Arifov Elect Engn Inst, Tashkent 100125, Uzbekistan

[3] Univ Antwerp, B-2020 Antwerp, Belgium

来源：

SURFACE AND INTERFACE ANALYSIS | 2013年 / 45卷 / 01期

关键词：

sputtering yield; layer-by-layer sputtering; computer simulation; grazing ion bombardment; BOMBARDMENT;

D O I：

10.1002/sia.5086

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The peculiarities of sputtering processes at low-energy Ne grazing ion bombardment of Si(001), SiC(001) and Cu3Au(001) surfaces and their possible application for the surface modification have been studied by computer simulation. Sputtering yields in the primary knock-on recoil atoms regime versus the initial energy of incident ions (0.5-5 keV) and angle of incidence (0-30 degrees) with respect to the target surface have been calculated. It was shown that in the case of grazing ion bombardment, the layer-by-layer sputtering is possible, and its optimum is observed within the small angular range of the glancing angles near the threshold sputtering angle. Comparative studies of layer-by-layer sputtering for Si(001) and SiC(001) surfaces versus the initial energy of incident ions as well as an effective sputtering and sputtering threshold are discussed. Copyright (C) 2012 John Wiley & Sons, Ltd.

引用

页码：83 / 86

页数：4

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