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Two-dimensional multiferroic material of metallic p-doped SnSe
被引:51
|作者:
Du, Ruofan
[1
]
Wang, Yuzhu
[1
]
Cheng, Mo
[1
]
Wang, Peng
[1
]
Li, Hui
[1
]
Feng, Wang
[1
]
Song, Luying
[1
]
Shi, Jianping
[1
]
He, Jun
[2
]
机构:
[1] Wuhan Univ, Inst Adv Studies, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China
基金:
国家重点研发计划;
中国国家自然科学基金;
关键词:
THERMOELECTRIC PERFORMANCE;
THERMAL-CONDUCTIVITY;
FERROELECTRICITY;
D O I:
10.1038/s41467-022-33917-2
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
Two-dimensional multiferroic materials have garnered broad interests attributed to their magnetoelectric properties and multifunctional applications. Multiferroic heterostructures have been realized, nevertheless, the direct coupling between ferroelectric and ferromagnetic order in a single material still remains challenging, especially for two-dimensional materials. Here, we develop a physical vapor deposition approach to synthesize two-dimensional p-doped SnSe. The local phase segregation of SnSe2 microdomains and accompanying interfacial charge transfer results in the emergence of degenerate semiconductor and metallic feature in SnSe. Intriguingly, the room-temperature ferrimagnetism has been demonstrated in two-dimensional p-doped SnSewith the Curie temperature approaching to similar to 337 K. Meanwhile, the ferroelectricity is maintained even under the depolarizing field introduced by SnSe2. The coexistence of ferrimagnetism and ferroelectricity in two-dimensional p-doped SnSe verifies its multiferroic feature. This work presents a significant advance for exploring the magnetoelectric coupling in two-dimensional limit and constructing high-performance logic devices to extend Moore's law.
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页数:9
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