Measurement of contact potential of GaAs/AlGaAs heterostructure using Kelvin probe force microscopy

被引：11

作者：

Mizutani, T ^{[1
]}

Usunami, T ^{[1
]}

Kishimoto, S ^{[1
]}

Maezawa, K ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 7A期

关键词：

Kelvin probe force microscopy; KFM; GaAs/AlGaAs heterostructure; contact potential; charge neutrality level;

D O I：

10.1143/JJAP.38.L767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have shown that the contact potential of i-GaAs/i-AlGaAs heterostructures can be measured using Kelvin probe force microscopy (KFM). The measured contact potential difference between GaAs and AlGaAs increases monotonically with increasing AlAs mole fraction. This dependence does not agree with the model for the ideal interface where the measured contact potential is dominated by the Fermi level which lies in the midgap of bulk materials. The results are explained based on the model of the alignment of charge neutrality level during heterostructure formation.

引用

页码：L767 / L769

页数：3

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