Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

被引：67

作者：

Sun, X. ^{[1
]}

Saadat, O. I. ^{[2
]}

Chang-Liao, K. S. ^{[3
]}

Palacios, T. ^{[2
]}

Cui, S. ^{[1
]}

Ma, T. P. ^{[1
]}

机构：

[1] Yale Univ, New Haven, CT 06520 USA

[2] MIT, Cambridge, MA 02139 USA

[3] Natl Tsing Hua Univ Engn & Syst Sci, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 10期

基金：

美国国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; CURRENT COLLAPSE; ALGAN/GAN HEMTS; SURFACE-STATES; PASSIVATION; AL2O3; GAN; PERFORMANCE; IMPACT;

D O I：

10.1063/1.4795717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We introduce an ac-transconductance method to profile the gate oxide traps in a HfO2 gated AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) that can exchange carriers with metal gates, which in turn causes changes in analog and pulsed channel currents. The method extracts energy and spacial distributions of the oxide and interface traps under the gate from the frequency dependence of ac transconductance. We demonstrate the method using MOS-HEMTs with gate oxides that were annealed at different temperatures. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795717]

引用

页数：4

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