Edge-tailored graphene oxide nanosheet-based field effect transistors for fast and reversible electronic detection of sulfur dioxide
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作者:
Shen, Fangping
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Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R China
Chinese Acad Sci, Inst Biophys, Beijing 100101, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R China
Shen, Fangping
[1
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Wang, Dong
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Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R China
Wang, Dong
[1
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Liu, Rui
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Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R China
Liu, Rui
[1
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Pei, Xianfeng
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Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R China
Pei, Xianfeng
[1
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Zhang, Ting
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Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R China
Zhang, Ting
[1
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Jin, Jian
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Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R ChinaChinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R China
Jin, Jian
[1
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机构:
[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R China
[2] Chinese Acad Sci, Inst Biophys, Beijing 100101, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Graphene oxide was tailored into GO nanosheets with periodic acid treatment. Interestingly, the latter have a superior sensing performance for the fast and reversible detection of SO2 compared with the former at room temperature. Its sensing mechanism was proposed from the structural changes of the GO nanosheets during the sensing and recovering processes.
机构:
Korea Inst Mat Sci, Composites Res Div, Chang Won 642831, Gyungnam, South KoreaKorea Inst Mat Sci, Composites Res Div, Chang Won 642831, Gyungnam, South Korea
Lee, Wonoh
Oh, Youngseok
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Korea Inst Mat Sci, Composites Res Div, Chang Won 642831, Gyungnam, South KoreaKorea Inst Mat Sci, Composites Res Div, Chang Won 642831, Gyungnam, South Korea
Oh, Youngseok
Lee, Kang Eun
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Korea Inst Mat Sci, Composites Res Div, Chang Won 642831, Gyungnam, South KoreaKorea Inst Mat Sci, Composites Res Div, Chang Won 642831, Gyungnam, South Korea
Lee, Kang Eun
Lee, Jea Uk
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Korea Inst Mat Sci, Composites Res Div, Chang Won 642831, Gyungnam, South KoreaKorea Inst Mat Sci, Composites Res Div, Chang Won 642831, Gyungnam, South Korea