COMPOSITIONAL AND OPTICAL ANALYSIS OF CHEMICALLY DEPOSITED ZINC-DOPED ANTIMONY SULPHIDE THIN FILMS

Thin films of antimony sulphide (Sb2S3) were grown using the chemical bath deposition method. The films were then doped using zinc impurities at different concentrations in the range 0.25M to 1.00M. The films were annealed at an annealing temperature of 200 degrees C. The compositional characterization was done using the Rutherford Backscattering techniques. The results show that the film thicknesses increased consistently with an increase in the concentration up to a concentration of 1.00M. However, an increased proportion of trace element possibly from the soda-lime glass substrates were also observed. The optical characterization was done using Fourier transform infrared spectroscopy, and the results indicate that the transmittances of the film were quite high. The film thickness was up to 1.5 mu m, which indicate that the films are suitable for use in fabrication of photonic devices especially in photovoltaic solar cell devices.