Novel fabrication method of semiconductor nano-electromechanical structures using controlled surface step distribution

We selectively etched a GaAs sacrificial layer under InAs wires preferentially grown on bunched steps on misoriented GaAs (110) surfaces, which led to the successful formation of InAs nanoscale cantilevers with a length of 50-100 nm, width of 20-50 nm, and thickness of 5-10 nm. This is a novel fabrication technique for nano-scale electromechanical structures, which can serve as an alternate to state-of-the-art electron-beam lithography.