XPS studies on silicide formation in ion beam irradiated Au/Si system

被引：38

作者：

Sarkar, DK

Bera, S

Dhara, S

Nair, KGM

Narasimhan, SV

Chowdhury, S

机构：

[1] INDIRA GANDHI CTR ATOM RES,DIV MAT SCI,KALPAKKAM 603102,TAMIL NADU,INDIA

[2] INDIRA GANDHI CTR ATOM RES,BARC,WATER & STEAM CHEM LAB,KALPAKKAM 603102,TAMIL NADU,INDIA

[3] UNIV KALYANI,DEPT PHYS,KALYAN 741235,W BENGAL,INDIA

来源：

APPLIED SURFACE SCIENCE | 1997年 / 120卷 / 1-2期

关键词：

ion beam mixing; radiation enhanced diffusion; X-ray photoelectron spectroscopy; gold silicide;

D O I：

10.1016/S0169-4332(97)00235-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

X-ray photoelectron spectroscopic (XPS) studies were carried out on ion-beam irradiated Au/Si system. Thin films of Au (500 Angstrom) were vapour deposited on Si(111) and irradiated with 120 keV Ar+ ions at different temperatures. The XPS investigation showed the formation of gold silicide. Even in the case of the sample irradiated at room temperature silicide phase was observed at the top surface indicating the out-diffusion of silicon. Increase in the concentration of silicide phase at the top surface with increasing temperature of irradiation was observed suggesting higher out-diffusion of silicon at elevated irradiation temperature. The paper presents the results of the above study and proposes a simple model to explain the growth of the silicide phase. (C) 1997 Elsevier Science B.V.

引用

页码：159 / 164

页数：6

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