Secondary Electron Generation in Electron-beam-irradiated Solids: Resolution Limits to Nanolithography

被引：8
|
作者：
Lee, Kyu Won [1 ,2 ]
Yoon, S. M. [1 ,2 ]
Lee, S. C. [1 ,2 ]
Lee, W. [1 ,2 ]
Kim, I. -M. [1 ,2 ]
Lee, Cheol Eui [1 ,2 ]
Kim, D. H. [3 ]
机构：
[1] Korea Univ, Dept Phys, Seoul 136713, South Korea
[2] Korea Univ, Inst Nano Sci, Seoul 136713, South Korea
[3] Seoul Natl Univ Technol, Seoul 139743, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 55卷 / 04期
关键词：
Electron-beam nanolithography; Secondary electron generation; Monte Carlo simulation; LITHOGRAPHY; SIMULATION; POLYMETHYLMETHACRYLATE;
D O I：
10.3938/jkps.55.1720
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have investigated the secondary electron generation in electron-beam-irradiated solids by means of a Monte Carlo simulation. The slow secondary electron energy was found to be independent of the position and the incident energy of the electron beam, and the electron beam broadening in thin films due to secondary electrons was found to be at least 5-10 nm, setting limits to the nanolithographic resolution.
引用
收藏
页码：1720 / 1723
页数：4
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