Study properties of monolayers with quantum dots of semiconductors A2B6 and A3B5

被引：0
|
作者：
Kabanov, V. F. [1 ]
Pereverzev, Y. E. [1 ,2 ]
Hassoon, Hassoon O. A. [1 ,3 ]
Glukhovskoy, E. G. [1 ]
机构：
[1] Saratov NG Chernyshevskii State Univ, Astrakhanskaya 83, Saratov 410012, Russia
[2] Educ & Res Inst Nanostruct & Biosyst, Astrakhanskaya 83, Saratov 410012, Russia
[3] Univ Technol Baghdad, Alsinaa St, Baghdad, Iraq
来源：
MATERIALS TODAY-PROCEEDINGS | 2018年 / 5卷 / 05期
基金：
俄罗斯科学基金会;
关键词：
quantum dot; monolayer; current-voltage characteristics; electron energy; PROTRUSIONS; SURFACE;
D O I：
10.1016/j.matpr.2018.02.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Experimental and theoretical study of semiconductor quantum dots on base multicomponent compounds such as A(2)B(6) and A(3)B(5) performed in the work. It was investigated the peculiarities of the electronic spectra of these nanoparticles by scanning tunneling microscopy. Analysis of results allowed us to estimate the position of the first three levels in the electron spectrum of studied nanosized objects. It was obtained good qualitative and quantitative agreement of experimental results with the theoretical estimate. Developed approach allows us to solve the inverse problem - to clarify the size of nanoscale objects when their chemical composition is precisely known. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码：13735 / 13738
页数：4
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