Effect of alkali halides on the persistent spectral hole burning in Ge-Ga-S glasses doped with Eu3+

被引：0
|
作者：
Chung, WJ [1 ]
Heo, J [1 ]
Jha, A [1 ]
机构：
[1] Univ Leeds, Dept Mat, Leeds LS2 9JT, W Yorkshire, England
来源：
XIIITH INTERNATIONAL SYMPOSIUM ON NON-OXIDE GLASSES AND NEW OPTICAL GLASSES PTS 1 AND 2 | 2002年
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D O I：
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中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Addition of CsBr and KBr into Eu3+-doped Ge-Ga-S glasses resulted in persistent spectral hole burning (PSHB) with high quantum efficiency, whereas the addition of alkali chloride did not show any evidence for a hole formation process. The characterization of the phonon side band (PSB) spectra revealed the site for Eu3+ ions located near the Ga-Br-. or Ga-Cl- units. The presence of Br ions near Eu3+ lowers the energy of the conduction band, thereby enabling the interaction between the 4f electrons and the resultant conduction band. The interaction made the photo-reduction of Eu3+ to Eu2+ possible. However, the higher coupling of phonon energy with Eu3+ together with the higher electronegativity of Cl- ion in CsCl-containing glass compared to its CsBr counterpart, hindered the photo-reduction of Eu3+ into Eu2+.
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页码：492 / 494
页数：3
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