Bidirectional Devices for Automotive-Grade Electrostatic Discharge Applications

被引:27
|
作者
Salcedo, Javier A. [1 ]
Hajjar, Jean-Jacques [1 ]
Malobabic, Slavica [2 ]
Liou, Juin J. [2 ]
机构
[1] Analog Devices Inc, Wilmington, MA 01887 USA
[2] Univ Cent Florida, Orlando, FL 32816 USA
关键词
Electrostatic discharge (ESD); DESIGN;
D O I
10.1109/LED.2012.2190261
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High bidirectional holding-voltage clamps are introduced for applications operating in harsh environments. The clamps' terminals are formed with complementary doped 3-D "T" pattern and island active regions. Transmission-line-pulsed current in the ranges of +/- 0.15 and +/- 0.39 mA/mu m(2) is demonstrated for +/- 40- and +/- 25-V holding-voltage clamps, respectively. The high bidirectional holding voltage is optimized without increasing spacing between the terminals of the devices, achieving a compact clamp architecture successfully codesigned with advanced transceiver circuits.
引用
收藏
页码:860 / 862
页数:3
相关论文
共 50 条
  • [41] GaN Power Devices for Automotive Applications
    Uesugi, T.
    Kachi, T.
    GALLIUM NITRIDE MATERIALS AND DEVICES VIII, 2013, 8625
  • [42] An Automotive-Grade Monolithic Masterless Fault-Tolerant Hybrid Dickson DC-DC Converter for 48-V Multi-Phase Applications
    Ashourloo, Mojtaba
    Namburi, Venkata Raghuram
    Pique, Gerard Villar
    Pigott, John
    Bergveld, Henk Jan
    El Sherif, Alaa
    Trescases, Olivier
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2021, 56 (12) : 3608 - 3618
  • [43] Generalized Analytical Model for Capacity Evaluation of Automotive-Grade Lithium Batteries (vol 162, pg A308, 2015)
    Galushkin, N. E.
    Yazvinskaya, N. N.
    Galushkin, D. N.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2015, 162 (03) : X8 - X8
  • [44] ELECTROSTATIC DISCHARGE THERMAL FAILURE IN SEMICONDUCTOR-DEVICES
    DWYER, VM
    FRANKLIN, AJ
    CAMPBELL, DS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (11) : 2381 - 2387
  • [45] Electrostatic discharge testing of tunneling magnetoresistive (TMR) devices
    Wallash, A
    Hillman, J
    Sharma, M
    Wang, SX
    IEEE TRANSACTIONS ON MAGNETICS, 2000, 36 (05) : 2809 - 2811
  • [47] Investigation of Minority Carrier Distribution in Semiconductor-Controlled Rectifier Devices and the Impact on Electrostatic Discharge Applications
    Tai, Ya-Li
    Lee, Jam-Wem
    Lien, Chen-Hsin
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (02)
  • [48] THE INFLUENCE OF ELECTROSTATIC DISCHARGE (ESD) ON THE QUALITY OF ELECTRONIC COMPONENTS IN THE AUTOMOTIVE INDUSTRY
    Ogrean, Sergiu Adrian
    Marginean, Ioan Lauren
    Moldovan, Liviu
    ACTA TECHNICA NAPOCENSIS SERIES-APPLIED MATHEMATICS MECHANICS AND ENGINEERING, 2024, 67 (04): : 675 - 680
  • [49] Development of functionalised foam for electrostatic discharge applications
    Silva, Catia S.
    Lima, Andre
    Rodrigues, Sergio J. F.
    Goncalves, Luis F. F. F.
    Sampaio, Alvaro M.
    Oliveira, Luis
    Fernandes, Andre
    Pontes, Antonio J.
    PLASTICS RUBBER AND COMPOSITES, 2020, 49 (10) : 470 - 478
  • [50] Fracture Toughness Analysis of Automotive-Grade Dual-Phase Steel Using Essential Work of Fracture (EWF) Method
    Kumar, Sunil M. R.
    Schmidova, Eva
    Konopik, Pavel
    Melzer, Daniel
    Bozkurt, Fatih
    Londe, Neelakantha, V
    METALS, 2020, 10 (08) : 1 - 12