High Performance Organic Field-Effect Transistor Based on diF-TESADT Crystalline Thin Film

被引：0
|
作者：
Liu Chunming [1 ,2 ]
Xu Hongyuan [2 ]
Jiang Zhixiong [2 ]
Zhou Hang [1 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Shenzhen, Guangdong, Peoples R China
[2] Shenzhen China Star Optoelect Technol Co LTD, Guangming New Dist 9-2,Tangming Rd, Shenzhen, Guangdong, Peoples R China
来源：
2018 9TH INTHERNATIONAL CONFERENCE ON COMPUTER AIDED DESIGN FOR THIN-FILM TRANSISTORS (CAD-TFT) | 2018年
关键词：
diF-TESADT; thin film transistors; solvent vapor annealing;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
Field effect transistors based on 2, 8-difluoro-5, 11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) crystalline film reveal excellent electrical properties: mobility up to 2.25 cm(2) V-1 s(-1) and an on/off ratio of 1 x10(6). Thin films devices based on diF-TESADT also exhibited strong photoswitching property with an on/off ratio about 10(3).
引用
收藏
页码：21 / 21
页数：1
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