Unified electro-thermal stability criterion for bipolar transistors

被引：33
|
作者：
Vanhoucke, T [1 ]
Hurkx, GAM [1 ]
机构：
[1] Philips Res Leuven, B-3001 Louvain, Belgium
来源：
Proceedings of the 2005 BIPOLAR/BiCMOS Circuits and Technology Meeting | 2005年
关键词：
avalanche breakdown; bipolar transistors; electrothermal effects; stability criteria;
D O I：
10.1109/BIPOL.2005.1555196
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present an unified electro-thermal criterion for quantifying the stability region of bipolar transistors. The criterion can be used for process optimization or circuit design. We propose a new figure-of-merit as the maximum V-CE at which the current at peakf(T) can be applied without electro-thermal runaway.
引用
收藏
页码：37 / 40
页数：4
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