Metal-insulator transition in the spinel-type Cu(Ir1-xVx)2S4

被引:7
|
作者
Kawashima, Yuusuke [1 ]
Horibe, Naoki [1 ]
Awaka, Junji [1 ]
Yamamoto, Hiroki [1 ]
Ebisu, Shuji [1 ]
Nagata, Shoichi [1 ]
机构
[1] Muroran Inst Technol, Dept Mat Sci & Engn, Muroran, Hokkaido 0508585, Japan
关键词
spinel-type CuIr2S4; CuV2S4; Cu(Ir1-xVx)(2)S-4; metal-insulator transition; electrical conductivity; magnetic properties;
D O I
10.1016/j.physb.2006.04.006
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The spinel CuIr2S4 exhibits a temperature-induced metal-insulator (M-I) transition at around TM-I = 226 K with a structural transformation, at which a simultaneous bond dimerization with spin-singlet state and charge-ordering transition takes place. Conversely, CuV2S4 exhibits two-step anomalies at about 92 and 56 K, reflecting the CDW state. High-purity spinel-type Cu(Ir1-xVx)(2)S-4 specimens have been synthesized. The lattice constant does not obey Vegard's law, but looks like a parabolic curve. The d electrons on the octahedral B sites play a dominant role in determining the physical properties. A low substitution (x approximate to 0.04) of V for Ir leads to disappearance of the step-like sharp M-I transition, and vice versa, a low substitution of Ir for V destroys the CDW transition. The local structural and orbital degrees of freedom in Cu(Ir1-xVx)(2)S-4 couple to the spin system and the electronic state. The M-I transition and the CDW state are incompatible with each other in Cu(Ir1-xVx)(2)S-4. In the metallic phase, a novel relationship, namely "a mirror image effect" has been manifestly found between the residual resistivity and the electronic energy density-of-states D(epsilon(F)) at the Fermi level. The lower the resistivity, the higher the value of D(epsilon(F)). Furthermore, a composition-induced gradual M-I transition is found over the range of 0.00 <= X <= 1.00, where the most insulating behavior is displayed around x approximate to 0.2-0.3. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:208 / 216
页数:9
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