Photolithography allows high-Q AlN microresonators for near octave-spanning frequency comb and harmonic generation

被引：23

作者：

Liu, Jia ^{[1
,2
]}

Weng, Haizhong ^{[3
,4
]}

Afridi, Adnan Ali ^{[3
,4
]}

Li, Jing ^{[3
,4
]}

Dai, Jiangnan ^{[1
,2
]}

Ma, Xiang ^{[1
,2
]}

Long, Hanling ^{[1
,2
]}

Zhang, Yi ^{[1
,2
]}

Lu, Qiaoyin ^{[1
,2
]}

Donegan, John F. ^{[3
,4
]}

Guo, Weihua ^{[1
,2
]}

机构：

[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, 1037 Luoyu Rd, Wuhan 430074, Peoples R China

[2] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, 1037 Luoyu Rd, Wuhan 430074, Peoples R China

[3] Trinity Coll Dublin, Sch Phys, CRANN, Dublin 2, Ireland

[4] Trinity Coll Dublin, AMBER, Dublin 2, Ireland

来源：

OPTICS EXPRESS | 2020年 / 28卷 / 13期

基金：

爱尔兰科学基金会; 中国国家自然科学基金;

关键词：

SILICON-NITRIDE MICRORESONATORS; KERR;

D O I：

10.1364/OE.395013

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Single-crystal aluminum nitride (AlN) possessing both strong Pockels and Kerr nonlinear optical effects as well as a very large band gap is a fascinating optical platform for integrated nonlinear optics. In this work, fully etched AlN-on-sapphire microresonators with a high-Q of 2.1 x 10(6) for the TE00 mode are firstly demonstrated with the standard photolithography technique. A near octave-spanning Kerr frequency comb ranging from 1100 to 2150 nm is generated at an on-chip power of 406 mW for the TM00 mode. Due to the high confinement, the TE10 mode also excites a Kerr comb from 1270 to 1850nm at 316 mW. In addition, frequency conversion to visible light is observed during the frequency comb generation. Our work will lead to a large-scale, low-cost, integrated nonlinear platform based on AlN. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：19270 / 19280

页数：11

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