Diamond-Like Carbon Film Deposition Using DC Ion Source with Cold Hollow Cathode

Carbon diamond-like thin films on a silicon substrate were deposited by direct reactive ion beam method with an ion source based on Penning direct-current discharge system with cold hollow cathode. Deposition was performed under various conditions. The pressure (12-200 mPa) and the plasma-forming gas composition consisting of different organic compounds and hydrogen (C3H8, CH4, Si(CH3)(2)Cl-2, H-2), the voltage of accelerating gap in the range 0.5-5 kV, and the substrate temperature in the range 20850 C were varied. Synthesized films were researched using nanoindentation, Raman, and FTIR spectroscopy methods. Analysis of the experimental results was made in accordance with a developed model describing processes of growth of the amorphous and crystalline carbon materials.