Si(001) surface passivation caused by Bi adsorption

被引：0
|
作者：
Koval, IF
Melnik, PV
Nakhodkin, MG
Pyatnitsky, MYU
Afanasieva, TV
机构：
来源：
FRONTIERS IN NANOSCALE SCIENCE OF MICRON/SUBMICRON DEVICES | 1996年 / 328卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：105 / 108
页数：4
相关论文
共 50 条
  • [41] Progressive changes in atomic structure and gap states on Si(001) by Bi adsorption
    Chuasiripattana, K
    Srivastava, GP
    SURFACE SCIENCE, 2005, 574 (01) : 43 - 51
  • [42] Surface structure of cesium adsorption on the Si(001) 2 x 1 surface
    Hamamatsu, H
    Yeom, HW
    Yokoyama, T
    Kayama, T
    Ohta, T
    PHYSICAL REVIEW B, 1998, 57 (19): : 11883 - 11886
  • [43] Surface passivation of InAs(001) with thioacetamide
    Petrovykh, DY
    Long, JP
    Whitman, LJ
    APPLIED PHYSICS LETTERS, 2005, 86 (24) : 1 - 3
  • [44] Study of successive phase transitions of the Si(001)-Bi surface by RHEED
    Hanada, Takashi, 1600, (242): : 1 - 3
  • [45] ADSORPTION OF MOLECULAR OXYGEN ONTO Si1-xGex/Si(001) SURFACE
    Greenchuck, A. A.
    Afanasieva, T. V.
    Koval, I. P.
    Nakhodkin, M. G.
    UKRAINIAN JOURNAL OF PHYSICS, 2012, 57 (03): : 355 - 360
  • [46] Adsorption of Sb on the In-induced surface reconstructions of Si(001) and Si(111)surfaces
    Li, DM
    Atoji, M
    Okamoto, T
    Tambo, T
    Tatsuyama, C
    SURFACE SCIENCE, 1998, 417 (2-3) : 210 - 219
  • [47] Theoretical study of Si and N adsorption on the Si-terminated SiC(001) surface
    Pizzagalli, L
    Catellani, A
    Galli, G
    Gygi, F
    Baratoff, A
    SURFACE REVIEW AND LETTERS, 1999, 6 (06) : 1143 - 1150
  • [48] Surface stress calculation for one-monolayer adsorption of As on the Si(001) and the Ge(001) surfaces
    Dubey, J. D.
    Kushwaha, J. P.
    Prasad, Bhimlal
    INDIAN JOURNAL OF PHYSICS, 2008, 82 (12) : 1701 - 1705
  • [49] Surface electromigration of metals on Si(001):In/Si(001)
    Kono, S
    Goto, T
    Ogura, Y
    Abukawa, T
    SURFACE SCIENCE, 1999, 420 (2-3) : 200 - 212
  • [50] Surface electromigration of metals on Si(001):In/Si(001)
    Tohoku Univ, Sendai, Japan
    Surf Sci, 2-3 (200-212):
12345