Physical vapor transport growth and properties of SiC monocrystals of 4H polytype

被引：0
|
作者：
Augustine, G
Hobgood, HM
Balakrishna, V
Dunne, G
Hopkins, RH
机构：
[1] Northrop Grumman Corporation, Electron. Sensors and Syst. Division, Science and Technology Center, Pittsburgh, PA 15235-5080
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1997年 / 202卷 / 01期
关键词：
D O I：
10.1002/1521-3951(199707)202:1<137::AID-PSSB137>3.0.CO;2-Y
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The physical vapor transport technique can be employed to fabricate large diameter silicon carbide crystals (up to 50 mm diameter) exhibiting uniform 4H-polytype over the full crystal volume. Crystal growth rate is controlled to first order by temperature conditions and ambient pressure. 4H-polytype uniformity is controlled by polarity of the seed crystal and the growth temperature. 4H-SiC crystals exhibit crystalline defects mainly in the form of dislocations with densities in the 10(4) cm(-2) range and micropipe defects, the latter having densities as low as 10 cm(-2) in best crystals. Electrical conductivity in 4H-SiC bulk crystals ranges from <10(-2) Omega cm, n-type, to insulating (>10(15) Omega cm) at room temperature.
引用
收藏
页码：137 / 148
页数：12
相关论文
共 50 条
  • [21] 4H POLYTYPE OF SILVER-IODIDE
    JOHNSON, Q
    SCHOCK, RN
    ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1975, 31 (MAY15): : 1482 - 1483
  • [22] BVCEO versus BVCBO for 4H and 6H Polytype SiC Bipolar Junction Transistors
    Balachandran, S
    Chow, TP
    Agarwal, A
    Scozzie, S
    Jones, KA
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 893 - 896
  • [23] 4H polytype grain formation in PVT-grown 6H-SiC ingots
    Fujimoto, T
    Katsuno, M
    Ohtani, N
    Aigo, T
    Yashiro, H
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 47 - 50
  • [24] 4H polytype grain formation in PVT-grown 6H-SiC ingots
    Fujimoto, T.
    Katsuno, M.
    Ohtani, N.
    Aigo, T.
    Yashiro, H.
    Materials Science Forum, 2002, 389-393 (01) : 47 - 50
  • [25] Spin exchange dynamics in 4H SiC monocrystals with different nitrogen donor concentrations
    Holiatkina, M.
    Poeppl, A.
    Kalabukhova, E.
    Lancok, J.
    Savchenko, D.
    JOURNAL OF APPLIED PHYSICS, 2023, 134 (14)
  • [26] Growth of volume silicon carbide monocrystals of 4H and 6H polytypes
    Maksimov, AY
    Maltsev, AA
    Yushin, NK
    Barash, IS
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1995, 21 (10): : 20 - 24
  • [27] Nucleation of Threading Dislocations in 4H-SiC at Early Physical-Vapor-Transport Growth Stage
    Shao, Qinqin
    Geng, Wenhao
    Xu, Suocheng
    Chen, Penglei
    Zhang, Xi
    Shen, Ruohan
    Tian, He
    Pi, Xiaodong
    Yang, Deren
    Wang, Rong
    CRYSTAL GROWTH & DESIGN, 2023, 23 (07) : 5204 - 5210
  • [28] Structural investigation of the seeding process for physical vapor transport growth of 4H-SiC single crystals
    Ohtani, Noboru
    Ohshige, Chikashi
    Katsuno, Masakazu
    Fujimoto, Tatsuo
    Sato, Shinya
    Tsuge, Hiroshi
    Ohashi, Wataru
    Yano, Takayuki
    Matsuhata, Hirofumi
    Kitabatake, Makoto
    JOURNAL OF CRYSTAL GROWTH, 2014, 386 : 9 - 15
  • [29] ACOUSTIC PROPERTIES OF A BULK SILICON-CARBIDE CRYSTAL OF THE 4H POLYTYPE
    MAKSIMOV, AY
    MALTSEV, AA
    YUSHIN, NK
    ANDRIANOV, GO
    RUSSIAN ULTRASONICS, 1994, 24 (06): : 329 - 334
  • [30] 4H SiC epitaxial growth with chlorine addition
    La Via, Francesco
    Galvagno, Giuseppa
    Foti, Gaetano
    Mauceri, Marco
    Leone, Stefano
    Pistone, Giuseppe
    Abbondanza, Giuseppe
    Veneroni, Alessandro
    Masi, Maurizio
    Valente, Gian Luca
    Crippa, Danilo
    CHEMICAL VAPOR DEPOSITION, 2006, 12 (8-9) : 509 - 515
12345