Regularities of remote plasma enhanced chemical vapor deposition of silicon nitride films

被引：0
|
作者：
Alexandrov, S. E. [1 ]
机构：
[1] St Petersburg State Polytech Univ, St Petersburg 195251, Russia
来源：
RUSSIAN JOURNAL OF GENERAL CHEMISTRY | 2015年 / 85卷 / 05期
关键词：
DILUTING NITROGEN; EMISSION-SPECTROSCOPY; ARGON; CVD; TEMPERATURE; PARAMETERS; LAYERS;
D O I：
10.1134/S1070363215050412
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Specific features of remote plasma enhanced chemical vapor deposition processes with inductive and capacitive coupling of power have been analyzed. Experimental results from a study of the physical and chemical regularities of those processes have been considered. Influence of diluting nitrogen with noble gases on growth rate and composition of the deposited films has been discussed. Essential role of argon diluting providing a high concentration of atomic nitrogen in the reacting gas phase required for plasma chemical synthesis of nitride films was demonstrated. Possible approaches to further improvement of plasma enhanced chemical deposition processes have been proposed.
引用
收藏
页码：1238 / 1251
页数：14
相关论文
共 50 条
  • [21] Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride
    Boehme, C
    Lucovsky, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (05): : 2622 - 2628
  • [22] Plasma enhanced chemical vapor deposition of zirconium nitride thin films
    Atagi, LM
    Samuels, JA
    Smith, DC
    Hoffman, DM
    COVALENT CERAMICS III - SCIENCE AND TECHNOLOGY OF NON-OXIDES, 1996, 410 : 289 - 294
  • [23] On the mechanism of remote plasma-enhanced chemical vapor deposition of films
    Polyakov, O. V.
    Badalyan, A. M.
    Bakhturova, L. F.
    Borisov, V. O.
    HIGH ENERGY CHEMISTRY, 2008, 42 (04) : 332 - 334
  • [24] On the mechanism of remote plasma-enhanced chemical vapor deposition of films
    O. V. Polyakov
    A. M. Badalyan
    L. F. Bakhturova
    V. O. Borisov
    High Energy Chemistry, 2008, 42 : 332 - 334
  • [25] GROWTH AND CHARACTERIZATION OF SILICON-NITRIDE FILMS BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
    HAN, IK
    LEE, YJ
    JO, JW
    LEE, JI
    KANG, KN
    APPLIED SURFACE SCIENCE, 1991, 48-9 : 104 - 110
  • [26] Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition
    A. V. Novak
    V. R. Novak
    A. A. Dedkova
    E. E. Gusev
    Semiconductors, 2018, 52 : 1953 - 1957
  • [27] Silicon Nitride ARC Thin Films by New Plasma Enhanced Chemical Vapor Deposition Source Technology
    George, M.
    Chandra, H.
    Morse, P.
    Morris, J.
    Madocks, J.
    PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4, 2008, : 1759 - 1763
  • [28] Formation of crystalline silicon carbon nitride films by microwave plasma-enhanced chemical vapor deposition
    Chen, LC
    Yang, CY
    Bhusari, DM
    Chen, KH
    Lin, MC
    Lin, JC
    Chuang, TJ
    DIAMOND AND RELATED MATERIALS, 1996, 5 (3-5) : 514 - 518
  • [29] Plasma-enhanced chemical vapor deposition of thick silicon nitride films with low stress on InP
    Shi, L
    Steenbergen, CAM
    deVreede, AH
    Smit, MK
    Scholtes, TLM
    Groen, FH
    Pedersen, JW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (02): : 471 - 473
  • [30] Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition
    Novak, A. V.
    Novak, V. R.
    Dedkova, A. A.
    Gusev, E. E.
    SEMICONDUCTORS, 2018, 52 (15) : 1953 - 1957
12345