Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design

被引：116

作者：

Tomic, Stanko ^{[1
]}

Jones, Tim S. ^{[2
]}

Harrison, Nicholas M. ^{[1
,3
]}

机构：

[1] STFC Daresbury Lab, Dept Computat Sci & Engn, Warrington WA4 4AD, Cheshire, England

[2] Univ Warwick, Dept Chem, Coventry CV4 7AL, W Midlands, England

[3] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 26期

关键词：

electronic structure; energy gap; Fermi level; gallium arsenide; III-V semiconductors; indium compounds; infrared spectra; Raman spectra; semiconductor quantum dots; solar cells; visible spectra;

D O I：

10.1063/1.3058716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a theoretical study of the electronic and absorption properties of the intermediate band (IB) formed by a three dimensional structure of InAs/GaAs quantum dots (QDs) arranged in a periodic array. Analysis of the electronic and absorption structures suggests that the most promising design for an IB solar cell material, which will exhibit its own quasi-Fermi level, is to employ small QDs (6-12 nm QD lateral size). The use of larger QDs leads to extension of the absorption spectra into a longer wavelength region but does not provide a separate IB in the forbidden energy gap.

引用

页数：3

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