Directly modulated AlGaInAs-InP Microcylinder Lasers

被引:0
|
作者
Lv, Xiao-Meng [1 ]
Long, Heng [1 ]
Zou, Ling-Xiu [1 ]
Yao, Qi-Feng [1 ]
Huang, Yong-Zhen [1 ]
Xiao, Jin-Long [1 ]
Du, Yun [1 ]
机构
[1] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China
关键词
(250.5960) Semiconductor lasers; (250.3140) Integrated optoelectronic circuits;
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We fabricate AlGaInAs-InP microcylinder lasers with an output waveguide surrounded by BCB. Single mode operation at continuous wave injection current is demonstrated. A small signal 3dB bandwidth of 4 GHz is achieved at 50 mA.
引用
收藏
页数:3
相关论文
共 50 条
  • [41] MBE GROWTH OF GRADED INDEX ALGAINAS MQW LASERS ON INP
    ALLOVON, M
    QUILLEC, M
    BLEZ, M
    KAZMIERSKI, C
    JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 484 - 488
  • [42] Device design of 1.3μm AlGaInAs-InP narrow strip structure for self-pulsation operation
    Wu, GH
    O'Brien, CG
    Seo, WH
    Donegan, JF
    Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks, 2005, 5825 : 203 - 213
  • [43] Highly uniform operation of high-performance 1.3-μm AlGaInAs-InP monolithic laser arrays
    Lin, CC
    Wu, MC
    Liao, HH
    Wang, WH
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (05) : 590 - 597
  • [44] Investigation of Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers
    Takino, Yuta
    Shirao, Mizuki
    Sato, Takashi
    Nishiyama, Nobuhiko
    Arai, Shigehisa
    2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2010,
  • [45] Dynamical characteristics of AlGaInAs/InP microdisk lasers subject to optical injection
    Huang, Yong-Zhen
    Zou, Ling-Xiu
    Liu, Bo-Wen
    Yang, Yue-De
    Long, Heng
    Xiao, Jin-Long
    Du, Yun
    LASER RESONATORS, MICRORESONATORS, AND BEAM CONTROL XVII, 2015, 9343
  • [46] Simulation of 1.3-μm AlGaInAs/InP strained MQW lasers
    Hsieh, SW
    Chen, HF
    Yao, MW
    Kuo, YK
    SEMICONDUCTOR LASERS AND APPLICATIONS II, 2004, 5628 : 318 - 326
  • [47] AlGaInAs/InP ridge-guide lasers operating at 1.55μm
    Evans, GA
    Sih, JP
    Chou, TM
    Kirk, JB
    Butler, JK
    Pang, L
    IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II, 1998, 3284 : 205 - 210
  • [48] Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers
    Liou, Bo-Ting
    Yen, Sheng-Horng
    Yao, Ming-Wei
    Chen, Mei-Ling
    Kuo, Yen-Kuang
    Chang, Shu-Hsuan
    OPTOELECTRONIC DEVICES: PHYSICS, FABRICATION, AND APPLICATION III, 2006, 6368
  • [49] Transfer Printing of AlGaInAs/InP Etched Facet Lasers to Si Substrates
    Loi, Ruggero
    O'Callaghan, James
    Roycroft, Brendan
    Robert, Cedric
    Fecioru, Alin
    Trindade, Antonio Jose
    Gocalinska, Agnieszka
    Pelucchi, Emanuele
    Bower, Chris Anthony
    Corbett, Brian
    IEEE PHOTONICS JOURNAL, 2016, 8 (06):
  • [50] Low-cost and high-performance 1.3-μm AlGaInAs-InP uncooled laser diodes
    Peng, Te-Chin
    Huang, Yun-Hsun
    Yang, Chih-Chao
    Huang, Kun-Fu
    Lee, Feng-Ming
    Hu, Chih-Wei
    Wu, Meng-Chyi
    Ho, Chong-Long
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (9-12) : 1380 - 1382