Electrochemical potential gradients in Pb(Zr,Ti)O3 thin

被引:0
|
作者
Brazier, M [1 ]
Mansour, S [1 ]
McElfresh, M [1 ]
机构
[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
来源
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin film PbZr0.55Ti0.45O3 (PZT) capacitors were observed to develop a de voltage offset when driven with an ac applied electric field. This voltage offset displayed a strong dependence on the ambient oxygen partial pressure, pO(2), of the atmosphere above the film, in addition to applied electric field and temperature dependencies. A scenario is proposed wherein a chemical potential gradient is established in the film, the magnitude of which is determined by the ambient pO(2). The subsequent redistribution of oxygen vacancies is thought to create the observed voltage offset. This hypothesis was supported by the observation of similar voltage offsets in compositionally graded PZT films. This effect shows promise for novel low-temperature oxygen sensing applications.
引用
收藏
页码:507 / 510
页数:4
相关论文
共 50 条
  • [21] Zr/Ti ratio dependence of the deformation in the hysteresis loop of Pb(Zr,Ti)O3 thin films
    Lee, EG
    Lee, JK
    Kim, JY
    Lee, JG
    Jang, HM
    Kim, SJ
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1999, 18 (24) : 2025 - 2028
  • [22] Fabrication of piezoelectric ceramic fibers by extrusion of Pb(Zr, Ti)O3 powder and Pb(Zr, Ti)O3 sol mixture
    Qiu, JH
    Tani, J
    Kobayashi, Y
    Um, TY
    Takahashi, H
    SMART MATERIALS & STRUCTURES, 2003, 12 (03): : 331 - 337
  • [23] DIFFUSE PHASE-TRANSITIONS IN (PB,BA) (ZR,TI)O3 (PBZT) AND (PB,LA) (ZR,TI)O3 (PLZT)
    JONKER, GH
    JUAREZ, R
    BURGGRAAF, AJ
    STENGER, CGF
    FERROELECTRICS, 1980, 24 (1-4) : 293 - 296
  • [24] Preparation and ferroelectric properties of freestanding Pb(Zr,Ti)O3 thin membranes
    Zuo, Zhenghu
    Chen, Bin
    Zhan, Qing-feng
    Liu, Yiwei
    Yang, Huali
    Li, Zhixiang
    Xu, Gaojie
    Li, Run-Wei
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (18)
  • [25] Excimer laser crystallized (Pb,La)(Zr,Ti)O3 thin films
    Bharadwaja, S. S. N.
    Dechakupt, T.
    Trolier-McKinstry, S.
    Beratan, H.
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2008, 91 (05) : 1580 - 1585
  • [26] Abnormal domain switching in Pb(Zr,Ti)O3 thin film capacitors
    Wu, Aiying
    Vilarinho, Paula M.
    Wu, Dong
    Gruverman, Alexei
    APPLIED PHYSICS LETTERS, 2008, 93 (26)
  • [27] Thermodynamics and fabrication of epitaxial Pb(Zr,Ti)O3 (PZT) thin films
    Oh, SH
    Jang, HM
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 32 : S1544 - S1546
  • [28] Strain-imaging observation of Pb(Zr, Ti)O3 thin films
    Takata, Keiji
    Kushida, Keiko
    Torii, Kazuyoshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (5 B): : 2890 - 2894
  • [29] Nanoscale domain switching mechanism in Pb(Zr,Ti)O3 thin film
    H.R. Zeng
    G.R. Li
    Q.R. Yin
    Z.K. Xu
    Applied Physics A, 2003, 76 : 401 - 404
  • [30] Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O3 thin films
    Lohse, O
    Grossmann, M
    Boettger, U
    Bolten, D
    Waser, R
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (04) : 2332 - 2336