Optically pumped semiconductor lasers at 505nm in the power range above 100mW

被引:3
|
作者
Seelert, Wolf
Kubasiak, Stefan
Negendank, Johannes
Luebeck, R. von Elm Coherent
Chilla, Juan
Zhou, Hailong
Coherent, Eli Weiss
机构
关键词
D O I
10.1117/12.659286
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Lasers based on optically pumped semiconductors (OPS) offer unique capabilities in both wavelength tailoring and power scaling compared to traditional solid-state lasers. In particular, these lasers can be designed in wavelength to realize for instance 505nm, which enables excitation of two fluorescent dye chemistry sets originally established by 488 and 514 nm legacy argon lasers. Highly efficient intra cavity frequency doubling of an 1010nm OPS yields over 100 mW of output power at 505 nm. In this paper we will present a brief background on OPS technology. We will then discuss specifics of the 505 nm laser and present both performance and reliability data for this laser.
引用
收藏
页数:4
相关论文
共 50 条
  • [21] Design of Highly-Efficient High-Power Optically-Pumped Semiconductor Disk Lasers
    Demaria, Frank
    Lorch, Steffen
    Menzel, Susanne
    Riedl, Michael
    Rinaldi, Fernando
    Roesch, Rudolf
    Unger, Peter
    2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2008, : 139 - 140
  • [22] High-power, continuous-wave, optical parametric oscillator pumped by an optically pumped semiconductor laser at 532 nm
    Samanta, G. K.
    Ebrahim-Zadeh, M.
    OPTICS LETTERS, 2010, 35 (12) : 1986 - 1988
  • [23] Power scaling of diode-pumped Pr:YLF lasers in the 910 nm spectral range
    Li, Zhuang
    Shi, Chengkun
    Fang, Run
    Feng, Qichen
    Xiao, Bo
    Xu, Huiying
    Cai, Zhiping
    OPTICS AND LASER TECHNOLOGY, 2022, 153
  • [24] MODELOCKED PICOSECOND PULSES FROM 490 NM TO 2 MU-M WITH OPTICALLY PUMPED SEMICONDUCTOR-LASERS
    PUTNAM, RS
    SALOUR, MM
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1983, 439 : 66 - 70
  • [25] Over 100mW high power operation of 1625nm L-band DFB laser diodes
    Kise, T
    Hiraiwa, K
    Koizumi, S
    Yamanaka, N
    Funabashi, M
    Kasukawa, A
    LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 802 - 803
  • [26] 100mW G-band MMIC Power Amplifier Based on 50nm GaN HEMT Technology
    Guo, Fangjin
    Xu, Yuehang
    Wu, Shaobing
    Tao, Hongqi
    Ma, Erchen
    Chen, Tangsheng
    Wang, Weibo
    2022 PHOTONICS & ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS 2022), 2022, : 748 - 751
  • [27] Single frequency operation of continuous-wave high-power Optically-Pumped Semiconductor Lasers
    Laurain, A.
    Hader, J.
    Koch, S. W.
    Heinen, B.
    Kunert, B.
    Moloney, J. V.
    2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2013,
  • [28] Active and hybrid modelocking of a high power (∼ 100 mW) monolithic semiconductor laser at 1550 nm
    Ahmad, Faisal R.
    Rana, Farhan
    2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2007, : 500 - +
  • [29] High stability 488 nm light generated by intra-cavity frequency doubling in optically pumped semiconductor disc lasers
    Wang, Fei
    Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2019, 48 (06):
  • [30] High-power sweeping semiconductor light sources at 840 nm with up to 100 nm tuning range
    Shidlovski, V. R.
    Ilchenko, S. N.
    Lobintsov, A. A.
    Shramenko, M. V.
    Yakubovich, S. D.
    OPTICAL COHERENCE TOMOGRAPHY AND COHERENCE DOMAIN OPTICAL METHODS IN BIOMEDICINE XVI, 2012, 8213