GaN-based light-emitting diodes on origami substrates

被引：20
|
作者：
Jung, Younghun [1 ]
Wang, Xiaotie [2 ]
Kim, Jiwan [3 ]
Kim, Sung Hyun [1 ]
Ren, Fan [2 ]
Pearton, Stephen J. [4 ]
Kim, Jihyun [1 ]
机构：
[1] Korea Univ, Dept Chem & Biol Engn, Seoul 136701, South Korea
[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[3] Korea Elect Technol Inst, Flexible Display Res Ctr, Songnam 463816, Gyeonggi Do, South Korea
[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 23期
基金：
新加坡国家研究基金会;
关键词：
D O I：
10.1063/1.4726123
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaN-based light-emitting diodes (LEDs) were transferred to paper substrates after a laser lift-off (LLO) process with an ArF excimer laser system (lambda = 193 nm) to remove the sapphire substrate and produce freestanding blue LED templates. The threshold voltage (similar to 2.7 V), current-voltage characteristics, and peak emission wavelength (442 nm) were not changed after the paper substrate was subsequently wrinkled. We were able to demonstrate transfers to both planar and folded (origami) paper structures, showing the promise of the LLO process for transferring LEDs to arbitrary surfaces. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726123]
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页数：3
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