Two-dimensional LBIC and internal quantum efficiency investigations of porous silicon-based gettering procedure in multicrystalline silicon

被引：15
|
作者：
Dimassi, W. [1 ]
Bouaicha, M. [1 ]
Kharroubi, M. [1 ]
Lajnef, M. [1 ]
Ezzaouia, H. [1 ]
Bessais, B. [2 ]
机构：
[1] Ctr Rech & Technol Energie, Lab Photovolta Semicond & Nanostruct, Hammam Lif 2050, Tunisia
[2] Ctr Rech & Technol Energie, Lab Nanomat & Syst Energie, Hammam Lif 2050, Tunisia
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2008年 / 92卷 / 11期
关键词：
multicrystalline silicon; gettering; passivation; LBIC mapping; IQE mapping;
D O I：
10.1016/j.solmat.2008.06.003
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this work, a porous silicon-based gettering technique was applied to multicrystalline silicon (mc-Si) wafers. Porous silicon (PS) was formed by the stain-etching technique and was used as a sacrificial layer for efficient external purification technique. The gettering procedure consists of achieving a PS/mc-Si/PS structure that undergoes a heat treatment at 900 degrees C for 90 min in an infrared furnace under a N-2 ambient. After removing the PS layers, mc-Si solar cells were realized. The effect of the gettering procedure was evaluated by means of the laser beam-induced current (LBIC) mapping, the internal quantum efficiency (IQE) mapping and the dark current-voltage (I-V) characteristic. Consequently. LBIC and IQE images show an enhancement of the gettered sample as compared to a reference untreated one. The serial resistance and the shunt resistance carried out from the dark I-V curves confirm this gettering-related solar cell improvement. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1421 / 1424
页数：4
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