Numerical Simulation of InGaAsP-InP Buried Stripe Semiconductor Laser

被引：0
|
作者：
Mahmoudieh, Afshin [1 ]
Soroosh, Mohammad [1 ]
Sabaeian, Mohammad [2 ]
机构：
[1] Shahid Chamran Univ, Dept Elect Engn, Ahvaz, Iran
[2] Shahid Chamran Univ, Dept Phys, Ahvaz, Iran
来源：
2014 22ND IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE) | 2014年
关键词：
Semiconductor laser; InGaAsP-InP; Traveling wave equations; finite difference method;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A numerical simulation of a steady state model based on the traveling wave equations of the spontaneous and stimulated emission fields for an InGaAsP-InP buried Stripe semiconductor laser is presented. To solve the field equations the finite difference method is employed. The optical output power versus the bias current is calculated.
引用
收藏
页码：496 / 499
页数：4
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