Characterization of Dislocation-Based Nanotransistors

被引：0

作者：

Reiche, Manfred ^{[1
]}

Kittler, Martin ^{[2
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[2] IHP Microelect, D-15236 Frankfurt, Oder, Germany

来源：

16TH INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES | 2012年 / 8549卷

关键词：

SILICON;

D O I：

10.1117/12.927401

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Dislocations are native nanowires. The realization of well-defined dislocation networks allows the electrical characterization of only a small number of dislocations. Different types of dislocations were analyzed by integration into the channel of MOSFETs. A substantial increase of the drain current was proved if only a few dislocations are present in the channel of nMOSFETs. Low-temperature measurements indicate single-electron tunneling on dislocation core defects.

引用

页数：7

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