Hazards abatement in deep ultraviolet lithography

被引:0
|
作者
Green, PG [1 ]
机构
[1] Syst Dev Environm Hlth & Safety Serv EHS2, San Bruno, CA 94066 USA
关键词
D O I
暂无
中图分类号
R318 [生物医学工程];
学科分类号
0831 ;
摘要
In keeping with "Moore's Law," the semiconductor industry demand for finer line widths in silicon wafer production has pushed towards 248 - 193nm Deep Ultra Violet (DuV) lithography, as the means of accomplishing 64 and 256-megabit DRAM generations. Additionally, high power excimer lasers (>100W) have found their way into the mainstream of industrial manufacturing of Liquid Crystal and Flat Panel Display's, and the ablation of silicon and metals. This paper will examine the hazards associated with DuV lithography and its high power counterparts, and the specifics of pre and post sale laser safety. Included will be discussions on installation considerations, ocular and biological effects, class IIIB and IV laser control areas, performance requirements, records and reports, fit-up and interface requirements, warnings and instructions and test for compliance. Additional ancillary considerations will focus on the effects also associated these type of lasers including ozone generation, toxic gases, flammability, and Electromagnetic Magnetic Compatibility (EMC). The intent of this presentation will be to provide background on this once obscure laser type, and to familiarize safety professionals with the broad range of hazards associated with its uses, in its now mainstream industrial applications. Attention will also focus on providing the audience with hazard mitigation pre-requisites, and risk planning management techniques when working with, or around this type of laser system.
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页码:246 / 255
页数:10
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