Muonium in synthetic diamond

被引：0

作者：

Mamedov, T. N. ^{[1
]}

Baturin, A. S. ^{[2
]}

Blank, V. D. ^{[3
]}

Gritsaj, K. I. ^{[1
]}

Kuznetsov, M. S. ^{[3
]}

Nosukhin, S. A. ^{[3
]}

Ralchenko, V. G. ^{[4
]}

Scheuermann, R. ^{[5
]}

Stoykov, A. V. ^{[5
]}

Terentiev, S. A. ^{[3
]}

机构：

[1] Joint Inst Nucl Res, Dubna 141980, Moscow Reg, Russia

[2] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Reg, Russia

[3] Technol Inst Superhard & Novel Carbon Mat, Troitsk 142190, Moscow Region, Russia

[4] Russian Acad Sci, Ctr Nat Sci, Inst Gen Phys, Moscow 119991, Russia

[5] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

来源：

关键词：

Muon-spin rotation; Semiconductors; Muonium; CHEMICAL-VAPOR-DEPOSITION; MICROWAVE PLASMA; NITROGEN;

D O I：

10.1016/j.diamond.2012.11.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Behavior of the muonium in two polycrystalline CVD diamond samples and in the sample composed of few single-crystal synthetic diamonds was studied by transverse-field mu SR measurement. The hyperfine interaction constants for muonium in the synthetic samples are in agreement with those in natural diamond. The relaxation rate of muon spin and the amount of the Mu(T) fraction in the synthetic samples are close to those observed in IIa- and IIb-type single-crystal natural diamonds. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：38 / 41

页数：4

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