FORMATION OF Ge NANOCRYSTALS BY ELECTRON BEAM EVAPORATION

被引：0

作者：

Basa, P. ^{[1
]}

Molnar, G. ^{[1
]}

Koos, A. A. ^{[1
]}

Dozsa, L. ^{[1
]}

Nemcsics, A. ^{[1
]}

Horvath, Zs. J. ^{[1
]}

Gorley, P. M. ^{[2
]}

Makhniy, V. P. ^{[2
]}

Bilichuk, S. V. ^{[2
]}

Frasunyak, V. M. ^{[2
]}

Horley, P. P. ^{[2
]}

机构：

[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, POB 49, H-1525 Budapest, Hungary

[2] Yuri Fedkovych Chernivtsi Natl Univ, Dept Elect & Energy Engn, Coll Phys, UA-58012 Chernovtsy, Ukraine

来源：

PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES | 2007年

基金：

匈牙利科学研究基金会;

关键词：

D O I：

10.1142/9789812770950_0096

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Ge nanocrystals were formed by electron beam evaporation on SiO2-covered Si substrates. Dependencies of the nanocrystal size, the nanocrystal surface coverage, and sheet resistance of the Ge layer were studied on the evaporation time. The growth mechanism of the nanocrystals is the Volmer-Weber type. The sheet resistance exhibited a power dependence on the nanocrystal size.

引用

页码：431 / +

页数：2

共 50 条

[31] Formation of germanium nanocrystals and amorphous nanoclusters in GeSiOx films using electron beam annealing
Zhang, Fan
Volodin, V. A.
Baranov, E. A.
Konstantinov, V. O.
Shchukin, V. G.
Zamchiy, A. O.
Vergnat, M.
VACUUM, 2022, 197
[32] Transmission Electron Microscopy (TEM) studies of Ge nanocrystals
Xu, Q
Sharp, ID
Liao, CY
Yi, DO
Ager, JW
Beeman, JW
Liliental-Weber, Z
Yu, KM
Zakharov, D
Chrzan, DC
Haller, EE
NANOPARTICLES AND NANOWIRE BUILDING BLOCKS-SYNTHESIS, PROCESSING, CHARACTERIZATION AND THEORY, 2004, 818 : 277 - +
[33] Electron affinities and ionization energies in Si and Ge nanocrystals
Melnikov, DV
Chelikowsky, JR
PHYSICAL REVIEW B, 2004, 69 (11)
[34] Production of stable atomic beam in electron beam evaporation process
Ohba, H
Shibata, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (7A): : 4258 - 4259
[35] Production of stable atomic beam in electron beam evaporation process
Ohba, Hironori
Shibata, Takemasa
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (7 A): : 4258 - 4259
[36] Characteristics of HfxSiyO films grown on Si0.8Ge0.2 layer by electron-beam evaporation
Cheng, XH
Song, ZR
Yu, YY
Yang, WW
Shen, DS
APPLIED PHYSICS LETTERS, 2006, 88 (12)
[37] Study on the optical property and crystallinity of Ge90Te10 films deposited by electron beam evaporation
Lee, Cheng-Chung
Ku, Shih-Liang
THIN SOLID FILMS, 2011, 519 (06) : 1794 - 1797
[38] Electrical switching properties of nanostructured multilayer superlattice Ge-Si ... Cu ... Si-Ge prepared by electron beam evaporation on glass
Golzan, Mir Maqsood
Hassanzadeh, Ali
Maleki, Mohammad Hadi
Kiani-Dehkiani, Ardeshir
SUPERLATTICES AND MICROSTRUCTURES, 2010, 48 (03) : 321 - 329
[39] Investigation on thick silicon dioxide films evaporation by electron beam evaporation
Wu, Xiao-Ming
Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2001, 12 (06): : 569 - 571
[40] Electrical properties of Ge nanocrystals grown in a SiO2 matrix using MeV electron beam irradiation
Kim, D. H.
Cho, H. Y.
Yang, W. -C.
Han, Y. H.
Lee, B. C.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (04): : 747 - 751

← 1 2 3 4 5 →