Etching and structural changes in nitrogen plasma immersion ion implanted polystyrene films

被引：50

作者：

Gan, B. K. ^{[1
]}

Bilek, M. M. M. ^{[1
]}

Kondyurin, A. ^{[1
]}

Mizuno, K. ^{[1
]}

McKenzie, D. R. ^{[1
]}

机构：

[1] Univ Sydney, Sch Phys A28, Sydney, NSW 2006, Australia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 247卷 / 02期

基金：

澳大利亚研究理事会;

关键词：

polystyrene; polymer modification; ion implantation; amorphous carbon; DLC; optical properties;

D O I：

10.1016/j.nimb.2006.01.063

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Plasma immersion ion implantation (PIII), with nitrogen ions of energy 20 keV in the fluence range of 5 x 10(14)-2 x 10(16) ions cm(-2), is used to modify 100 nm thin films of polystyrene on silicon wafer substrates. Ellipsometry is used to study changes in thickness with etching and changes in optical constants. Two distinctly different etch rates are observed as the polymer structure is modified. FTIR spectroscopy data reveals the structural changes, including changes in aromatic and aliphatic groups and oxidation and carbonisation processes, occurring in the polystyrene film as a function of the ion fluence. The transformation to a dense amorphous carbon-like material was observed to progress through an intermediate structural form containing a high concentration of C=C and C=O bonds. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：254 / 260

页数：7

共 50 条

[1] Etching and structural changes of polystyrene films during plasma immersion ion implantation from argon plasma
Kondyurin, A.
Gan, B. K.
Bilek, M. M. M.
Mizuno, K.
McKenzie, D. R.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 251 (02): : 413 - 418
[2] Kinetics of post-treatment structural transformations of nitrogen plasma ion immersion implanted polystyrene
Kosobrodova, E.
Kondyurin, A.
McKenzie, D. R.
Bilek, M. M. M.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 304 (01): : 57 - 66
[3] Argon plasma immersion ion implantation of polystyrene films
Kondyurin, A.
Gan, B. K.
Bilek, M. M. M.
McKenzie, D. R.
Mizuno, K.
Wuhrer, R.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (07): : 1074 - 1084
[4] Improved Multiprotein Microcontact Printing on Plasma Immersion Ion Implanted Polystyrene
Kosobrodova, E.
Gan, W. J.
Kondyurin, A.
Thorn, P.
Bilek, M. M. M.
ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (01) : 227 - 237
[5] Porous silicon implanted with nitrogen by plasma immersion ion implantation
Beloto, AF
Ueda, M
Abramof, E
Senna, JR
Leite, NF
da Silva, MD
Reuther, H
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 : 224 - 228
[6] Characterization of drills implanted with nitrogen plasma immersion ion implantation
Mandl, S
Gunzel, R
Rauschenbach, B
Hilke, R
Knosel, E
Kunanz, K
SURFACE & COATINGS TECHNOLOGY, 1998, 104 : 161 - 167
[7] Free radical kinetics in a plasma immersion ion implanted polystyrene: Theory and experiment
Kosobrodova, Elena A.
Kondyurin, Alexey V.
Fisher, Keith
Moeller, Wolfhard
McKenzie, David R.
Bilek, Marcela M. M.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 280 : 26 - 35
[8] GAS PLASMA-ETCHING OF ION-IMPLANTED CHROMIUM FILMS
YAMAZAKI, T
SUZUKI, Y
NAKATA, H
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06): : 1348 - 1350
[9] Reciprocal space mapping of silicon implanted with nitrogen by plasma immersion ion implantation
Abramof, E
Beloto, AF
Ueda, M
Günzel, R
Reuther, H
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 : 229 - 234
[10] SUPERCONDUCTIVITY AND STRUCTURAL-CHANGES OF NITROGEN-ION IMPLANTED MO THIN-FILMS
SAITO, K
ASADA, Y
JOURNAL OF PHYSICS F-METAL PHYSICS, 1987, 17 (11): : 2273 - 2283

← 1 2 3 4 5 →