QUASI-STATIONARY ELECTRON STATES IN SPHERICAL ANTI-DOT WITH DONOR IMPURITY

被引：0
|
作者：
Holovatsky, V. [1 ]
Makhanets, O. [1 ]
Frankiv, I. [1 ]
机构：
[1] Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine
来源：
ROMANIAN JOURNAL OF PHYSICS | 2012年 / 57卷 / 9-10期
关键词：
quantum anti-dot; quasi-stationary state; electron energy spectrum;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The electron energy spectrum in AlxGa1-xAs/GaAs semiconductor quantum anti-dot with donor impurity, placed into the center of a nanostructure is studied. The energies and semi-widths of the quasi-stationary states are defined within the distribution of the probability density of electron residence in quantum anti-dot.
引用
收藏
页码：1285 / 1292
页数：8
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