Fabrication of high density CdTe/GaAs nanodot arrays using nanoporous alumina masks

被引：5
|
作者：
Jung, Mi [1 ]
Lee, Hong Seok [2 ]
Park, Hong Lee [2 ]
Mho, Sun-il [1 ]
机构：
[1] Ajou Univ, Dept Mol Sci & Technol, Suwon 443749, South Korea
[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
来源：
CURRENT APPLIED PHYSICS | 2006年 / 6卷 / SUPPL. 1期
基金：
新加坡国家研究基金会;
关键词：
Nanoporous alumina mask; CdTe nanodot arrays; Molecular beam epitaxy;
D O I：
10.1016/j.cap.2006.01.036
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Long-range ordered semiconductor CdTe nanodot arrays of the uniform size were formed by molecular-beam epitaxy on the GaAs substrate as a replica of the nanoporous alumina mask in spite of the large lattice mismatch between GaAs and CdTe. The number per unit area and the size of nanodots of the heterostructure semiconductor CdTe/GaAs were controlled by those of pores in the mask. Using a very thin nanoporous alumina mask (<200 nm thick) prepared at the anodization voltage of 30 V in oxalic acid, fabricated were the arrays of CdTe nanodots (55 nm diameter) with the large number per unit area of 1.3 x 10(10) cm(-2). (C) 2006 Published by Elsevier B.V.
引用
收藏
页码：E187 / E191
页数：5
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