Origin of coherent phonons in Bi2Te3 excited by ultrafast laser pulses

被引:36
|
作者
Wang, Yaguo [1 ,2 ]
Guo, Liang [1 ,2 ]
Xu, Xianfan [1 ,2 ]
Pierce, Jonathan [3 ]
Venkatasubramanian, Rama [4 ]
机构
[1] Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USA
[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[3] RTI Int, Ctr Solid State Energet, Res Triangle Pk, NC 27709 USA
[4] Johns Hopkins Univ, Appl Phys Lab, Laurel, MD 20723 USA
基金
美国国家科学基金会;
关键词
DISPLACIVE EXCITATION; SB2TE3; BI2SE3; RAMAN; SB;
D O I
10.1103/PhysRevB.88.064307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Femtosecond laser pulses are used to excite coherent optical phonons in single crystal Bi2Te3 thin films. Oscillations from low-and high-frequency A(1g) phonon modes are observed. A perturbation model based on molecular dynamics reveals various possibilities of phonon generation due to complex interactions among different phonon modes. In order to elucidate the process of phonon generation, measurements on thin films with thicknesses below the optical absorption depth are carried out, showing that a gradient force is necessary to excite the observed A(1g) phonon modes, which provides a refined picture of displacive excitation of coherent phonon.
引用
收藏
页数:6
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