Backside-illuminated CMOS photodiodes with polysilicon grating back-reflectors

被引：0
|
作者：
Lu, Chen-Han [1 ]
Su, Hsiu-Wei [1 ]
Hung, Yung-Jr [1 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Photon, 70 Lienhai Rd, Kaohsiung 80424, Taiwan
来源：
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polysilicon grating reflectors are employed in thin backside-illuminated CMOS photodiodes to not only improve its responsivity for near-infrared light but also allow polarization-sensitive photocurrent generation. A 1.14x photocurrent enhancement is obtained for TE-polarized incidence.
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