Design of a CMOS T/R Switch With High Power Capability: Using Asymmetric Transistors

被引：9
|
作者：
Liu, Szu-Ling [1 ,2 ,3 ]
Wu, Meng-Hsiu [1 ,2 ]
Chin, Albert [1 ,2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan
[3] Taiwan Semicond Mfg Co Ltd, Hsinchu 300, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 12期
关键词：
BVdss; insertion loss; isolation; power-handling capability;
D O I：
10.1109/LMWC.2012.2227465
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A single-pole double-throw transmit/receive (T/R) switch has been realized by using both conventional and asymmetric MOSFETs in a standard 0.18 mu m CMOS technology. At 2.4 and 5.8 GHz, the asymmetric-transistor based T/R switch shows 2.7 dBm and 2.3 dBm improvements in measured 1 dB compression points (P(1 dB)s) than the conventional circuit of the same circuitry and layout, respectively. This switch also has good insertion losses of 0.62/0.7 and 0.94/1.2 dB for transmit-end/receive-end modes at 2.4 and 5.8 GHz, respectively.
引用
收藏
页码：645 / 647
页数：3
相关论文
共 50 条
  • [1] A High Power Handling Capability CMOS T/R Switch for X-Band Phased Array Antenna Systems
    Dinc, Tolga
    Zihir, Samet
    Tasdemir, Ferhat
    Gurbuz, Yasar
    2011 41ST EUROPEAN MICROWAVE CONFERENCE, 2011, : 1127 - 1129
  • [2] A High Power Handling Capability CMOS T/R Switch for X-Band Phased Array Antenna Systems
    Dinc, Tolga
    Zihir, Samet
    Tasdemir, Ferhat
    Gurbuz, Yasar
    2011 6TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE, 2011, : 566 - 568
  • [3] A High Power CMOS Differential T/R Switch using Multi-section Impedance Transformation Technique
    Kim, Hyun-Woong
    Ahn, Minsik
    Lee, Ockgoo
    Lee, Chang-Ho
    Laskar, Joy
    2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM, 2010, : 483 - 486
  • [4] DC-X-band high-power SOI CMOS T/R switch
    Suh, B.
    Min, B. -W.
    ELECTRONICS LETTERS, 2016, 52 (11) : 937 - 938
  • [5] High-Power GaN HEMT T/R Switch Using Asymmetric Series-Shunt/Shunt Configuration
    Hangai, Masatake
    Tarui, Yukinobu
    Kamo, Yoshitaka
    Hieda, Morishige
    Nakayama, Masatoshi
    IEICE TRANSACTIONS ON ELECTRONICS, 2011, E94C (10): : 1533 - 1538
  • [6] Analysis and Design of a Fully-Integrated High-Power Differential CMOS T/R Switch and Power Amplifier Using Multi-Section Impedance Transformation Technique
    Kim, Hyun-Woong
    Ahn, Minsik
    Lee, Ockgoo
    Kim, Hyoungsoo
    Kim, Hyungwook
    Lee, Chang-Ho
    ELECTRONICS, 2021, 10 (09)
  • [7] High-Isolation CMOS T/R Switch Design Using a Two-Stage Equivalent Transmission Line Structure
    Zhao, Chenxi
    Wu, Yipeng
    Liu, Huihua
    Wu, Yunqiu
    Kang, Kai
    IEEE ACCESS, 2017, 5 : 22704 - 22712
  • [8] ESD Protection Design of High-Linearity SPDT CMOS T/R Switch for Cellular Applications
    Hung, Tao-Yi
    Ker, Ming-Dou
    2019 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2019,
  • [9] ESD Protection Design on T/R Switch with Embedded SCR in CMOS Process
    Hung, Tao-Yi
    Ker, Ming-Dou
    2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2017,
  • [10] CMOS high power SPDT switch using multigate structure
    Ahn, Minsik
    Lee, Chang-Ho
    Laskar, Joy
    2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, 2007, : 3283 - +
12345