Non-contact AFM images measured on Si(111)√3 x √3-Ag and Ag(111) surfaces

被引:0
|
作者
Sugawara, Y [1 ]
Minobe, T [1 ]
Orisaka, S [1 ]
Uchihashi, T [1 ]
Tsukamoto, T [1 ]
Morita, S [1 ]
机构
[1] Osaka Univ, Grad Sch Engn, Dept Elect Engn, Osaka 5650871, Japan
关键词
atomic force microscope; AFM; Si(111)root 3 x root 3-Ag surface; Ag(111) surface;
D O I
10.1002/(SICI)1096-9918(199905/06)27:5/6<456::AID-SIA536>3.3.CO;2-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We investigated the force interactions between a Si tip and a Si(111)root 3 x root 3-Ag surface, as well as between a Si tip and an Ag(111) surface, using non-contact atomic force microscopy (AFM) operating in ultrahigh vacuum (UHV), The AFM images on the Si(111)root 3 x root 3-Ag surface showed three types of contrast that depended on the distance between a tip and a sample surface: at a tip-sample distance of 0.1-0.3 nm the AFM image showed a honeycomb arrangement, at a tip-sample distance of 0-0.05 nm the image showed the periodic structure of a triangle, consisting of three bright spots with relatively strong contrast, but at a distance of 0.05-0.1 nm the image contrast seemed to be intermediary between the other two types of contrast. When the tip is far from the sample surface, the tip-sample interaction force is dominated by physical bonding interactions such as Coulomb and/or van der Waals forces between the tip apex Si atom and the Ag trimer on the sample surface. On the other hand, just before contact, the tip-sample interaction force is dominated by chemical bonding interaction due to the onset of hybridization between the dangling bond of the tip apex Si atom and the orbital of the Si-Ag covalent bond on the surface. Furthermore, atomic resolution imaging of a pure metallic surface of Ag(111) was achieved, suggesting that non-contact AFM has potential for the investigation of a pure metallic surface. Copyright (C) 1999 John Wiley & Sons, Ltd.
引用
收藏
页码:456 / 461
页数:6
相关论文
共 50 条
  • [41] Step and Domain Boundary Effect of Surface Reconstruction to Si(111)-√3x√3-Ag
    Deng, Dongmei
    Sun, Lina
    Dai, Yurong
    Cao, Shixun
    Bai, Lihua
    Luo, Liqiang
    Zhang, Jincang
    ADVANCES IN CHEMISTRY RESEARCH II, PTS 1-3, 2012, 554-556 : 357 - 361
  • [42] Doping of a surface band on Si(111)√3 x √3-Ag -: art. no. 045312
    Crain, JN
    Gallagher, MC
    McChesney, JL
    Bissen, M
    Himpsel, FJ
    PHYSICAL REVIEW B, 2005, 72 (04):
  • [43] Formation of triangular islands on the Ge(111)-√3 x √3-Ag surface
    Kikuchi, Tsutomu
    Yokoyama, Takashi
    SURFACE SCIENCE, 2021, 703
  • [44] Missing Ag atom on Si(111)√3×√3-Ag surface observed by noncontact atomic force microscopy
    Morita, Seizo
    Sugawara, Yasuhiro
    Orisaka, Shigeki
    Uchihashi, Takayuki
    Japanese Journal of Applied Physics, Part 2: Letters, 1999, 38 (11 B):
  • [46] Reconstruction and dynamics of Ag atoms on Si(111)-√3 x √3-Ag surface studied by optical second-harmonic generation
    Deng, Dongmei
    Karaki, Youichi
    Suzuki, Takanori
    SURFACE SCIENCE, 2006, 600 (15) : 3052 - 3057
  • [47] Growth Process of Silicon on the Si(111) root 3 X root 3-Ag Surface at Room Temperature
    Minami, Tomoko
    Hashizume, Tomihiro
    Ichimiya, Ayahiko
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2009, 7 : 763 - 766
  • [48] Modification of electronic states of √3x√3-Ag structure by strained Ge/Si(111) substrate
    Mochizuki, Izumi
    Negishi, Ryota
    Shigeta, Yukichi
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (01)
  • [49] Structure of C70 layer on the Si(111) √3 x √3-Ag Surface: STM Study
    Woo, Jeongseok
    Shim, Hyungjoon
    Lee, Geunseop
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2018, 73 (05) : 599 - 604
  • [50] Multistage order-disorder surface transition of Si(111)√3 x √3-ag surface with defects
    Nakamura, Y
    Koga, H
    Watanabe, S
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2003, 72 (01) : 13 - 16