Fabrication of CNT emitter device by using rf-PECVD at low temperature

被引：0
|
作者：
Migita, T. [1 ]
Shiratori, Y. [1 ]
Kishino, T. [1 ]
Takeuchi, Y. [1 ]
机构：
[1] ICMR, Kawasaki Ku, Kanagawa 2100855, Japan
来源：
IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2 | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Carbon nanotube (CNT)-cathode device with micron-sized gate holes to be applied for field emission display (FED) was produced. This cathode device is fabricated by a combination of usual lithography process and radio frequency plasma enhanced chemical vapor deposition at low temperature. CNT-FED is believed to be next generation of FEDs due to excellent field emission characters of CNTs. Simple fabrication process and the good field emission characteristics are reported for the prepared devices.
引用
收藏
页码：1675 / 1678
页数：4
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