Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation

被引：24
|
作者：
Syaranamual, G. J. [1 ,2 ]
Sasangka, W. A. [1 ]
Made, R. I. [1 ]
Arulkumaran, S. [3 ]
Ng, G. I. [1 ,4 ]
Foo, S. C. [3 ]
Gan, C. L. [1 ,2 ]
Thompson, C. V. [1 ,5 ]
机构：
[1] Singapore MIT Alliance Res & Technol, Low Energy Elect Syst, Singapore 138602, Singapore
[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[3] Nanyang Technol Univ, Temasek Labs, Singapore 637553, Singapore
[4] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[5] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
来源：
MICROELECTRONICS RELIABILITY | 2016年 / 64卷
基金：
新加坡国家研究基金会;
关键词：
AlGaN/GaN; HEMT; ON-state; Reliability; III-V semiconductor; Wide band-gap semiconductor; RELIABILITY;
D O I：
10.1016/j.microrel.2016.07.012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the influence of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs) on their reliability under ON-state conditions. Devices stressed in the ON-state showed a faster decrease in the maximum drain current (I-Dmax) compared to identical devices stressed in the OFF-state with a comparable electric field and temperature. Scanning electron microscope (SEM) images of ON-state stressed devices showed pit formation at locations away from the gate-edge in the drain-gate access region. Cross-sectional transmission electron microscope (TEM) images also showed dark features at the AlGaN/SiN interface away from the gate edge. Electron energy loss spectroscopy (EELS) analysis of the dark features indicated the presence of gallium, aluminum and oxygen. These dark features correlate with pits observed in the SEM micrographs. It is proposed that in addition to causing joule heating, energetic electrons in the 2D electron gas contribute to device degradation by promoting electrochemical oxidation of the AlGaN. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：589 / 593
页数：5
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