Properties of a p-n Junction Formed in a Porous Silicon Film Grown by Metal-Assisted Chemical Etching

被引：1

作者：

Melnik, N. N. ^{[1
]}

Tregulov, V. V. ^{[2
]}

Skoptsova, G. N. ^{[2
]}

Ivanov, A. I. ^{[2
]}

Kostsov, D. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia

[2] Yesenin Ryazan State Univ, Ryazan 390000, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2022年 / 49卷 / 09期

关键词：

porous silicon; metal-assisted chemical etching; p-n junction; diffusion; Raman scattering; photovoltaic characteristics; current-voltage characteristics; charge carrier transport;

D O I：

10.3103/S1068335622090044

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The results of the study of the semiconductor structure with a p-n junction formed by thermal diffusion of phosphorus into a p-type porous silicon film are presented. The porous film was grown by metal-assisted chemical etching. It is shown that diffusion is accompanied by a decrease in silicon crystallite sizes in the porous layer. In the base region of the p-n junction, a quantum-size effect appears, leading to band gap widening. The observed charge carrier transfer mechanisms are characteristic of p-n junctions containing traps.

引用

页码：271 / 275

页数：5

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